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RCD/AFD Device

Trench MOSFET

SGT MOSFET

SJ MOSFET

SiC MOSFET

SiC Diode

碳化硅SiC MOSFETs

碳化硅MOSFET,高频高效的理想选择

主要应用领域

电动汽车OBS

充电桩

光伏逆变

UPS

Server

ESS PCS

产品列表

dbdb
ProductProduct StatusQualificationPackage TypeTechnologyVDS MaxRDS(on) TypVGS(th) MaxID @25℃ MaxQG(tot)Output CapacitanceMaximum Junction TemperatureMountingFeature
TCBF120N21M2AActiveIndustrialD2PAK 7LeSiC M11200 V21 mΩ4.5 V90 A111 nC170 pF175 ℃Surface MountHigh Performance
TCBF120N31M2AActiveAutomotiveD2PAK 7LeSiC M11200 V31 mΩ4.5 V68 A75 nC124 pF175 ℃Surface MountHigh Performance
TCR120N40M2ActiveIndustrialTSPAK-LFeSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Surface MountHigh Performance
TCR120N40M2AActiveAutomotiveTSPAK-LFeSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Surface MountHigh Performance
TCR120N60M2AActiveAutomotiveTSPAK-LFeSiC M21200 V60 mΩ4.5 V40 A40 nC70 pF175 ℃Surface MountHigh Performance
TCRZ120N40M2ActiveIndustrialTSPAK-DBCeSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Surface MountHigh Performance
TCRZ120N40M2AActiveAutomotiveTSPAK-DBCeSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Surface MountHigh Performance
TCRZ120N60M2AActiveAutomotiveTSPAK-DBCeSiC M21200 V60 mΩ4.5 V40 A40 nC70 pF175 ℃Surface MountHigh Performance
TCW120N16M2ActiveIndustrialTO247 3LeSiC M21200 V16 mΩ4.5 V118 A152 nC227 pF175 ℃Through HoleHigh Performance
TCW120N40M2ActiveIndustrialTO247 3LeSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Through HoleHigh Performance
TCZ120N16M2ActiveIndustrialTO247 4LeSiC M21200 V16 mΩ4.5 V118 A152 nC227 pF175 ℃Through HoleHigh Performance
TCZ120N21M2ActiveIndustrialTO247 4LeSiC M21200 V21 mΩ4.5 V90 A111 nC170 pF175 ℃Through HoleHigh Performance
TCZ120N31M2ActiveIndustrialTO247 4LeSiC M21200 V31 mΩ4.5 V68 A75 nC124 pF175 ℃Through HoleHigh Performance
TCZ120N40M2ActiveIndustrialTO247 4LeSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Through HoleHigh Performance
TCZ120N60M2ActiveIndustrialTO247 4LeSiC M21200 V60 mΩ4.5 V44 A40 nC70 pF175 ℃Through HoleHigh Performance
TCZ120N80M2ActiveIndustrialTO247 4LeSiC M21200 V80 mΩ4.5 V30 A28 nC52 pF175 ℃Through HoleHigh Performance
TCZN120N16M2ActiveIndustrialTO247-4L NotcheSiC M21200 V16 mΩ4.5 V118 A152 nC227 pF175 ℃Through HoleHigh Performance
TCZN120N21M2ActiveIndustrialTO247-4L NotcheSiC M21200 V21 mΩ4.5 V90 A111 nC170 pF175 ℃Through HoleHigh Performance
TCZN120N21M2AActiveAutomotiveTO247-4L NotcheSiC M21200 V21 mΩ4.5 V90 A111 nC170 pF175 ℃Through HoleHigh Performance
TCZN120N31M2ActiveIndustrialTO247-4L NotcheSiC M21200 V31 mΩ4.5 V68 A75 nC124 pF175 ℃Through HoleHigh Performance
TCZN120N31M2AActiveAutomotiveTO247-4L NotcheSiC M21200 V31 mΩ4.5 V68 A75 nC124 pF175 ℃Through HoleHigh Performance
TCZN120N40M2ActiveIndustrialTO247-4L NotcheSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Through HoleHigh Performance
TCZN120N40M2AActiveAutomotiveTO247-4L NotcheSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Through HoleHigh Performance
TCZN120N60M2ActiveIndustrialTO247-4L NotcheSiC M21200 V60 mΩ4.5 V44 A40 nC70 pF175 ℃Through HoleHigh Performance
TCZN120N80M2ActiveIndustrialTO247-4L NotcheSiC M21200 V80 mΩ4.5 V30 A28 nC52 pF175 ℃Through HoleHigh Performance
TCO120N16M2ActiveIndustrialBare DieeSiC M21200 V16 mΩ4.5 V118 A152 nC227 pF175 ℃Through HoleHigh Performance
TCO120N21M2ActiveIndustrialBare DieeSiC M21200 V21 mΩ4.5 V90 A111 nC170 pF175 ℃Through HoleHigh Performance
TCO120N21M2AActiveAutomotiveBare DieeSiC M21200 V21 mΩ4.5 V90 A111 nC170 pF175 ℃Through HoleHigh Performance
TCO120N31M2ActiveIndustrialBare DieeSiC M21200 V31 mΩ4.5 V68 A75 nC124 pF175 ℃Through HoleHigh Performance
TCO120N31M2AActiveAutomotiveBare DieeSiC M21200 V31 mΩ4.5 V68 A75 nC124 pF175 ℃Through HoleHigh Performance
TCO120N40M2ActiveIndustrialBare DieeSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Through HoleHigh Performance
TCO120N40M2AActiveAutomotiveBare DieeSiC M21200 V40 mΩ4.5 V57 A62 nC105 pF175 ℃Through HoleHigh Performance
TCO120N60M2ActiveIndustrialBare DieeSiC M21200 V60 mΩ4.5 V44 A40 nC70 pF175 ℃Through HoleHigh Performance
TCO120N80M2ActiveIndustrialBare DieeSiC M21200 V80 mΩ4.5 V30 A28 nC52 pF175 ℃Through HoleHigh Performance
TCT65N27M1ActiveIndustrialTOLLeSiC M1650 V27 mΩ4.5 V84 A91 nC207 pF175 ℃Surface MountHigh Performance
TCT65N45M1ActiveIndustrialTOLLeSiC M1650 V45 mΩ4.5 V44 A56 nC131 pF175 ℃Surface MountHigh Performance
TCW65N27M1ActiveIndustrialTO247 3LeSiC M1650 V27 mΩ4.5 V75 A91 nC207 pF175 ℃Through HoleHigh Performance
TCW65N45M1ActiveIndustrialTO247 3LeSiC M1650 V45 mΩ4.5 V44 A56 nC131 pF175 ℃Through HoleHigh Performance
TCZ65N27M1ActiveIndustrialTO247 4LeSiC M1650 V27 mΩ4.5 V75 A91 nC207 pF175 ℃Through HoleHigh Performance
TCZ65N45M1ActiveIndustrialTO247 4LeSiC M1650 V45 mΩ4.5 V44 A56 nC131 pF175 ℃Through HoleHigh Performance
TCO65N27M1ActiveIndustrialBare DieeSiC M1650 V27 mΩ4.5 V75 A91 nC207 pF175 ℃Through HoleHigh Performance
TCO65N45M1ActiveIndustrialBare DieeSiC M1650 V45 mΩ4.5 V44 A56 nC131 pF175 ℃Through HoleHigh Performance
TCBF65N27M1BActiveIndustrialD2TAK-7LeSiC M1650 V27 mΩ4.5 V75 A91 nC207 pF175 ℃Surface MountHigh Performance
TCBF65N45M1BActiveIndustrialD2TAK-7LeSiC M1650 V45 mΩ4.5 V44 A56 nC131 pF175 ℃Surface MountHigh Performance
TCL65N270M1RActiveIndustrialDFN8×8eSiC M1650 V270 mΩ4.2 V14 A11.2 nC26 pF175 ℃Surface MountHigh Performance
TCD75N360M1RActiveIndustrialTO-252eSiC M1750V360 mΩ4.2 V7 A12 nC23 pF175 ℃Through HoleHigh Performance
TCD75N190M1RActiveIndustrialTO-252eSiC M1750V190 mΩ4.2 V14 A16.5 nC28 pF175 ℃Through HoleHigh Performance
TCL75N180M1MActiveIndustrialDFN8×8eSiC M1750V180 mΩ4.5 V16.4 A22 nC36 pF175 ℃Surface MountHigh Performance
cx cv
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